Germanium tetrachloride (GeCl₄) is a precursor to the production of germane gas (GeH₄), a key deposition material for advanced epitaxy in microelectronics. As demand for high-performance devices continues to grow, the reliability and purity of GeCl₄ are essential to ensuring consistent GeH₄ generation and stable downstream processing. Our high-purity GeCl₄ enables the production of electronic-grade germane, supporting critical applications in transistor channel engineering, strain engineering, gate stacks, and next-generation device architectures for CPU/GPU processors, advanced 3D dynamic random access memory (DRAM), 5G wireless transistors and photonic integrated circuits.
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