As a global leader in germanium crystal pulling, our facility in Olen, Belgium is one of the few in the world capable of pulling dislocation-free germanium ingots. Diameters range from 4" to 12”.
Thanks to the closely matched thermal and crystallographic properties of germanium and gallium arsenide, epi-ready germanium substrates offer an attractive alternative for the epitaxial growth and/or layer transfer of III–V compounds.
Through our process, wafers are precisely off-cut in the required direction and thoroughly epi-cleaned for optimal nucleation. To guarantee a pristine growth surface, every production step is carefully controlled using statistical process control, and wafers undergo rigorous inspection. At the end of the process, each wafer receives a 100% naked-eye inspection by a trained operator.
Product highlights
| Dislocation density | 0/cm2 (0 EPD) |
| Diameter | 100mm (4”) - 150mm (6”) - 200mm (8") Special diameter up to 300mm on request |
| Resistivity and Dopant | |
| Minimum resistivity at 20 °C | |
| p-type | 0.005 Ω.cm |
| n-type | 0.050 Ω.cm |
| Maximum resistivity at 20 °C | 40 Ω.cm |
| Radial dispersion on a single substrate | 10% |
| Substrate Orientation | |
| Standard | (100) ± 0.5° |
| Aspect | |
| Substrate surface finish | Standard: One side polished, one side diamond ground/etched. Upon request: Double side polished, one side prime only. |
| Substrate edge finish and shape | Edge ground and etched, straight or round |
| Roughness | Polished side < 1 nm RMS |
| Surface status | EPI-ready |
| Perpendicular strength | |
| Minimal/Typical | 3 lbf / > 6 lbf |
| Thickness | |
| Diameter 100 mm (4”) | 140 µm or 175 μm for solar cells, other thickness available upon request |
| Diameter 150 mm (6”) | 225 μm for solar cells, other thickness available upon request |
| Diameter 200 mm (8") | 450 µm or 625 µm, other thickness available upon request |